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Optics Letters

| RAPID, SHORT PUBLICATIONS ON THE LATEST IN OPTICAL DISCOVERIES

  • Editor: Alan E. Willner
  • Vol. 37, Iss. 19 — Oct. 1, 2012
  • pp: 4071–4073

High-brightness 1.3 μm InAs/GaAs quantum dot tapered laser with high temperature stability

Yulian Cao, Haiming Ji, Pengfei Xu, Yongxian Gu, Wenquan Ma, and Tao Yang  »View Author Affiliations


Optics Letters, Vol. 37, Issue 19, pp. 4071-4073 (2012)
http://dx.doi.org/10.1364/OL.37.004071


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Abstract

We demonstrate high-brightness 1.3 μm tapered lasers with high temperature stability by using p-doped InAs/GaAs quantum dots (QDs) as the active region. It is found that the beam quality factor M2 for the devices is almost unchanged as the light power and temperature increase. The almost constant M2 results from the p-doped QD active region.

© 2012 Optical Society of America

OCIS Codes
(140.5960) Lasers and laser optics : Semiconductor lasers
(250.0250) Optoelectronics : Optoelectronics
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices

ToC Category:
Optoelectronics

History
Original Manuscript: April 23, 2012
Revised Manuscript: August 14, 2012
Manuscript Accepted: August 21, 2012
Published: September 24, 2012

Citation
Yulian Cao, Haiming Ji, Pengfei Xu, Yongxian Gu, Wenquan Ma, and Tao Yang, "High-brightness 1.3 μm InAs/GaAs quantum dot tapered laser with high temperature stability," Opt. Lett. 37, 4071-4073 (2012)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-37-19-4071


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