Abstract

The a-${\mathrm{SiN}}_{\mathrm{x}}\text{:}\mathrm{H}$ with a large bandgap of 3.8 eV was utilized to decorate ZnO nanowires. The UV emission from the a-${\mathrm{SiN}}_{\mathrm{x}}\text{:}\mathrm{H}$-decorated ZnO nanowires are greatly enhanced compared with the undecorated ZnO nanowire. The deep-level defect emission has been completely suppressed even though the sample was annealed at temperatures up to 400 °C. The incorporation of H and N is suggested to passivate the defect states at the nanowire surface and thus result in the flat-band effect near ZnO surface as well as reduction of the nonradiative recombination probability.

©2012 Optical Society of America

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