Abstract

The 2.7 μm emission properties in ${\mathrm{Er}}^{3+}$-doped bismuthate (${\mathrm{Bi}}_2{\mathrm{O}}_3\text{-}{\mathrm{GeO}}_2\text{-}{\mathrm{Ga}}_2{\mathrm{O}}_3\text{-}{\mathrm{Na}}_2\mathrm{O}$) glass were investigated in the present Letter. An intense 2.7 μm emission in ${\mathrm{Er}}^{3+}$-doped bismuthate glass was observed. It is found that ${\mathrm{Er}}^{3+}$-doped bismuthate glass possesses high spontaneous transition probability $\mathrm{A}$ ($65.26{\mathrm{s}}^{-1}$) and large 2.7 μm emission cross section ${\sigma }_{\mathrm{em}}$ ($9.53\times {10}^{-21}{\mathrm{cm}}^2$) corresponding to the stimulated emission of ${\mathrm{Er}}^{3+}$:${}^4{\mathrm{I}}_{11/2}\to {}^4{\mathrm{I}}_{13/2}$ transition. The emission characteristic and energy transfer process upon excitation of a conventional 980 nm laser diode in bismuthate glass were analyzed. Additionally, the structure of bismuthate glass was analyzed by the Raman spectrum. The advantageous spectroscopic characteristics of ${\mathrm{Er}}^{3+}$ single-doped bismuthate glass together with the prominent thermal property indicate that bismuthate glass might become an attractive host for developing solid-state lasers around 2.7 μm.

©2012 Optical Society of America

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