Vertical silicon nanowire arrays were fabricated leading to an enhanced photoluminescence (PL) emission and second-order nonlinear optical response. PL from the nanowires was increased by a factor of 50 as compared to bulk silicon. The second order nonlinearity was demonstrated in second-harmonic generation and rotational anisotropic measurements. Enhancement by at least a factor of 80 was achieved as compared to bulk silicon for the p-polarized input and s-polarized output. These enhancements in the silicon characteristics should enable highly desired applications using a silicon platform, such as nonlinear and active devices.
© 2012 Optical Society of America
Original Manuscript: April 6, 2012
Revised Manuscript: August 11, 2012
Manuscript Accepted: September 4, 2012
Published: October 3, 2012
M. Khorasaninejad, M. A. Swillam, K. Pillai, and S. S. Saini, "Silicon nanowire arrays with enhanced optical properties," Opt. Lett. 37, 4194-4196 (2012)