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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 37, Iss. 20 — Oct. 15, 2012
  • pp: 4200–4202

Infrared dielectric properties of low-stress silicon nitride

Giuseppe Cataldo, James A. Beall, Hsiao-Mei Cho, Brendan McAndrew, Michael D. Niemack, and Edward J. Wollack  »View Author Affiliations

Optics Letters, Vol. 37, Issue 20, pp. 4200-4202 (2012)

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Silicon nitride thin films play an important role in the realization of sensors, filters, and high-performance circuits. Estimates of the dielectric function in the far- and mid-IR regime are derived from the observed transmittance spectra for a commonly employed low-stress silicon nitride formulation. The experimental, modeling, and numerical methods used to extract the dielectric parameters with an accuracy of approximately 4% are presented.

© 2012 Optical Society of America

OCIS Codes
(310.3840) Thin films : Materials and process characterization
(310.6860) Thin films : Thin films, optical properties
(310.6188) Thin films : Spectral properties

ToC Category:
Thin Films

Original Manuscript: April 26, 2012
Revised Manuscript: September 7, 2012
Manuscript Accepted: September 10, 2012
Published: October 4, 2012

Giuseppe Cataldo, James A. Beall, Hsiao-Mei Cho, Brendan McAndrew, Michael D. Niemack, and Edward J. Wollack, "Infrared dielectric properties of low-stress silicon nitride," Opt. Lett. 37, 4200-4202 (2012)

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Fig. 1. Fig. 2. Fig. 3.

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