Silicon nitride thin films play an important role in the realization of sensors, filters, and high-performance circuits. Estimates of the dielectric function in the far- and mid-IR regime are derived from the observed transmittance spectra for a commonly employed low-stress silicon nitride formulation. The experimental, modeling, and numerical methods used to extract the dielectric parameters with an accuracy of approximately 4% are presented.
© 2012 Optical Society of America
Original Manuscript: April 26, 2012
Revised Manuscript: September 7, 2012
Manuscript Accepted: September 10, 2012
Published: October 4, 2012
Giuseppe Cataldo, James A. Beall, Hsiao-Mei Cho, Brendan McAndrew, Michael D. Niemack, and Edward J. Wollack, "Infrared dielectric properties of low-stress silicon nitride," Opt. Lett. 37, 4200-4202 (2012)