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Using carrier-depletion silicon modulators for optical power monitoring |
Optics Letters, Vol. 37, Issue 22, pp. 4681-4683 (2012)
http://dx.doi.org/10.1364/OL.37.004681
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Abstract
Defect-mediated subbandgap absorption is observed in ion-implanted silicon-on-oxide waveguides that experience a rapid thermal annealing at 1075°C. With this effect, general carrier-depletion silicon modulators exhibit the capability of optical power monitoring. Responsivity is measured to be
© 2012 Optical Society of America
OCIS Codes
(230.7020) Optical devices : Traveling-wave devices
(250.7360) Optoelectronics : Waveguide modulators
(250.0040) Optoelectronics : Detectors
ToC Category:
Optoelectronics
History
Original Manuscript: September 5, 2012
Manuscript Accepted: September 25, 2012
Published: November 9, 2012
Citation
Hui Yu, Dietmar Korn, Marianna Pantouvaki, Joris Van Campenhout, Katarzyna Komorowska, Peter Verheyen, Guy Lepage, Philippe Absil, David Hillerkuss, Luca Alloatti, Juerg Leuthold, Roel Baets, and Wim Bogaerts, "Using carrier-depletion silicon modulators for optical power monitoring," Opt. Lett. 37, 4681-4683 (2012)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-37-22-4681
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