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Optics Letters

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  • Editor: Alan E. Willner
  • Vol. 37, Iss. 22 — Nov. 15, 2012
  • pp: 4750–4752

Passively mode-locked Yb3+:ScSiO5 thin-disk laser

Katrin Sarah Wentsch, Lihe Zheng, Jun Xu, Marwan Abdou Ahmed, and Thomas Graf  »View Author Affiliations


Optics Letters, Vol. 37, Issue 22, pp. 4750-4752 (2012)
http://dx.doi.org/10.1364/OL.37.004750


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Abstract

Experimental investigations on a passively mode-locked Yb 3 + : Sc 2 SiO 5 (Yb:SSO) thin-disk laser are presented. The mode-locking was performed with a commercially available semiconductor saturable absorber mirror. The laser was operated at a repetition rate of 27 MHz and generated a maximum average output power of 27.8 W with a pulse duration of 298 fs. The spectrum was centered at 1036 nm. The beam was measured to be close to diffraction limited ( M 2 < 1.1 ). The promising results confirm the suitability of Yb:SSO for mode-locked thin-disk laser oscillators and indicate that this comparably new material deserves further attention by optimizing the crystal quality (growth and polishing) and doping levels for further power scaling.

© 2012 Optical Society of America

OCIS Codes
(140.3380) Lasers and laser optics : Laser materials
(140.4050) Lasers and laser optics : Mode-locked lasers
(140.3615) Lasers and laser optics : Lasers, ytterbium

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: August 9, 2012
Revised Manuscript: September 17, 2012
Manuscript Accepted: October 10, 2012
Published: November 14, 2012

Citation
Katrin Sarah Wentsch, Lihe Zheng, Jun Xu, Marwan Abdou Ahmed, and Thomas Graf, "Passively mode-locked Yb3+:Sc2SiO5 thin-disk laser," Opt. Lett. 37, 4750-4752 (2012)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-37-22-4750


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