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Internal photoemission-based photodetector on Si microring resonator |
Optics Letters, Vol. 37, Issue 23, pp. 4925-4927 (2012)
http://dx.doi.org/10.1364/OL.37.004925
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Abstract
We propose a photodetector (PD) based on the internal photoemission effect over a Schottky barrier on a CMOS-compatible Si microring resonator for 1.55 μm. To analyze the device, we model the microring waveguide partially covered by a metal/silicide nanolayer, using the Z-transform method. The proposed structure benefits from the resonant-cavity-enhanced (RCE) waveguide PDs enjoying high efficiency and wavelength selectivity. Simulations show that the maximum value of the bandwidth-efficiency product for the proposed structure is in the order of 10 GHz, which is much higher than those reported for other RCE-based PDs.
© 2012 Optical Society of America
OCIS Codes
(040.5160) Detectors : Photodetectors
(040.6040) Detectors : Silicon
(230.5160) Optical devices : Photodetectors
(230.5750) Optical devices : Resonators
ToC Category:
Detectors
History
Original Manuscript: September 24, 2012
Revised Manuscript: October 26, 2012
Manuscript Accepted: November 5, 2012
Published: November 28, 2012
Citation
Aref Rasoulzadeh Zali, Mohammad Kazem Moravvej-Farshi, and Gholamreza Abaeiani, "Internal photoemission-based photodetector on Si microring resonator," Opt. Lett. 37, 4925-4927 (2012)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-37-23-4925
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