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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 37, Iss. 24 — Dec. 15, 2012
  • pp: 5043–5045

Broadband near-infrared emission of chromium-doped sulfide glass-ceramics containing Ga2S3 nanocrystals

Jing Ren, Bo Li, Guang Yang, Weina Xu, Zhihuan Zhang, Mihail Secu, Vasile Bercu, Huidan Zeng, and Guorong Chen  »View Author Affiliations

Optics Letters, Vol. 37, Issue 24, pp. 5043-5045 (2012)

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Upon 808 nm excitation, an intense broadband near-infrared emission from Cr 4 + has been observed in 80 GeS 2 - 20 Ga 2 S 3 chalcogenide glass-ceramics (GCs) containing Ga 2 S 3 nanocrystals. The emission band peaking at 1250 nm covers the O, E, S bands (1000–1500 nm). The formation of Ga 2 S 3 nanocrystals ( 20 nm ) increases the emission intensity of Cr 4 + by more than three times. The quantum efficiency of the present GCs is as great as 36% at room temperature.

© 2012 Optical Society of America

OCIS Codes
(140.3280) Lasers and laser optics : Laser amplifiers
(160.2750) Materials : Glass and other amorphous materials
(160.6990) Materials : Transition-metal-doped materials

ToC Category:
Lasers and Laser Optics

Original Manuscript: August 22, 2012
Revised Manuscript: October 9, 2012
Manuscript Accepted: November 3, 2012
Published: December 5, 2012

Jing Ren, Bo Li, Guang Yang, Weina Xu, Zhihuan Zhang, Mihail Secu, Vasile Bercu, Huidan Zeng, and Guorong Chen, "Broadband near-infrared emission of chromium-doped sulfide glass-ceramics containing Ga2S3 nanocrystals," Opt. Lett. 37, 5043-5045 (2012)

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