Upon 808 nm excitation, an intense broadband near-infrared emission from Cr4+ has been observed in 80GeS2-20Ga2S3 chalcogenide glass-ceramics (GCs) containing Ga2S3 nanocrystals. The emission band peaking at 1250 nm covers the O, E, S bands (1000–1500 nm). The formation of Ga2S3 nanocrystals (∼20 nm) increases the emission intensity of Cr4+ by more than three times. The quantum efficiency of the present GCs is as great as 36% at room temperature.
© 2012 Optical Society of America
Lasers and Laser Optics
Original Manuscript: August 22, 2012
Revised Manuscript: October 9, 2012
Manuscript Accepted: November 3, 2012
Published: December 5, 2012
Jing Ren, Bo Li, Guang Yang, Weina Xu, Zhihuan Zhang, Mihail Secu, Vasile Bercu, Huidan Zeng, and Guorong Chen, "Broadband near-infrared emission of chromium-doped sulfide glass-ceramics containing Ga2S3 nanocrystals," Opt. Lett. 37, 5043-5045 (2012)