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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 37, Iss. 3 — Feb. 1, 2012
  • pp: 395–397

Graphene on SiC as a Q-switcher for a 2 μm laser

Qing Wang, Hao Teng, Yuwan Zou, Zhiguo Zhang, Dehua Li, Ran Wang, Chunqing Gao, Jingjing Lin, Liwei Guo, and Zhiyi Wei  »View Author Affiliations

Optics Letters, Vol. 37, Issue 3, pp. 395-397 (2012)

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Double-layer graphene epitaxially grown on silicon carbide was used to Q-switch a Tm:YAG laser. Stable Q-switched laser pulses at the central wavelength of 2.01 μm were obtained. The maximum average output power, pulse repetition rate, and single pulse energy were 38 mW, 27.9 kHz, and 1.74 μJ, respectively. Our results illustrate that graphene can be used as a saturable absorber at the 2 μm region.

© 2012 Optical Society of America

OCIS Codes
(140.3460) Lasers and laser optics : Lasers
(140.3540) Lasers and laser optics : Lasers, Q-switched
(160.4330) Materials : Nonlinear optical materials
(140.3538) Lasers and laser optics : Lasers, pulsed
(160.4236) Materials : Nanomaterials

ToC Category:
Lasers and Laser Optics

Original Manuscript: September 14, 2011
Revised Manuscript: November 30, 2011
Manuscript Accepted: December 8, 2011
Published: January 30, 2012

Virtual Issues
Vol. 7, Iss. 4 Virtual Journal for Biomedical Optics

Qing Wang, Hao Teng, Yuwan Zou, Zhiguo Zhang, Dehua Li, Ran Wang, Chunqing Gao, Jingjing Lin, Liwei Guo, and Zhiyi Wei, "Graphene on SiC as a Q-switcher for a 2 μm laser," Opt. Lett. 37, 395-397 (2012)

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