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Sub-100 nm structuring of indium-tin-oxide thin films by sub-15 femtosecond pulsed near-infrared laser light |
Optics Letters, Vol. 37, Issue 4, pp. 563-565 (2012)
http://dx.doi.org/10.1364/OL.37.000563
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Abstract
In magnetron sputtered indium-tin-oxide thin films of varying oxygen content, nanostructures were formed using tightly focused high-repetition rate near-infrared sub-15 femtosecond pulsed laser light. At radiant exposure well beyond the ablation threshold, cuts of 280–350 nm in width were generated. Illumination close to the ablation threshold resulted in periodic cuts of typically 20 nm in width at periodicities between 50 nm and 180 nm, as well as single sub-20 nm cuts. Subthreshold exposure, in combination with hydrochloric acid etching, yielded nanowires of 50 nm minimum lateral dimensions.
© 2012 Optical Society of America
OCIS Codes
(140.3390) Lasers and laser optics : Laser materials processing
(140.7090) Lasers and laser optics : Ultrafast lasers
(190.4180) Nonlinear optics : Multiphoton processes
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors
(310.6628) Thin films : Subwavelength structures, nanostructures
(310.7005) Thin films : Transparent conductive coatings
ToC Category:
Lasers and Laser Optics
History
Original Manuscript: November 22, 2011
Manuscript Accepted: December 9, 2011
Published: February 8, 2012
Citation
Maziar Afshar, Martin Straub, Henning Voellm, Dara Feili, Karsten Koenig, and Helmut Seidel, "Sub-100 nm structuring of indium-tin-oxide thin films by sub-15 femtosecond pulsed near-infrared laser light," Opt. Lett. 37, 563-565 (2012)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-37-4-563
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