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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 37, Iss. 4 — Feb. 15, 2012
  • pp: 692–694

Origin of strong white electroluminescence from dense Si nanodots embedded in silicon nitride

R. Huang, J. Song, X. Wang, Y. Q. Guo, C. Song, Z. H. Zheng, X. L. Wu, and Paul K. Chu  »View Author Affiliations

Optics Letters, Vol. 37, Issue 4, pp. 692-694 (2012)

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Strong white electroluminescence (EL) from SiN-based devices containing Si nanodots with a density of more than 4.6×1012/cm2 was investigated. The white EL illustrates enhanced light emission with increasing applied voltage and can be divided into two components, a dominant peak at 710nm and weak one at 550nm, which are close to those of the PL spectra optically pumped by the 325 and 488 nm lines, respectively. Based on the PL characteristics, we propose that the dominant EL band arises from the band-to-band recombination in the dense Si nanodots where quantum confinement plays a decisive role in the light emission, whereas the weak EL band originates from the radiative Si dangling bond (K0) centers in the silicon nitride matrix.

© 2012 Optical Society of America

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(260.3800) Physical optics : Luminescence
(160.4236) Materials : Nanomaterials

ToC Category:

Original Manuscript: November 15, 2011
Revised Manuscript: December 9, 2011
Manuscript Accepted: December 15, 2011
Published: February 14, 2012

R. Huang, J. Song, X. Wang, Y. Q. Guo, C. Song, Z. H. Zheng, X. L. Wu, and Paul K. Chu, "Origin of strong white electroluminescence from dense Si nanodots embedded in silicon nitride," Opt. Lett. 37, 692-694 (2012)

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