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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 37, Iss. 6 — Mar. 15, 2012
  • pp: 1103–1105

Ultrawide-bandwidth, superluminescent light-emitting diodes using InAs quantum dots of tuned height

S. Haffouz, P. J. Barrios, R. Normandin, D. Poitras, and Z. Lu  »View Author Affiliations

Optics Letters, Vol. 37, Issue 6, pp. 1103-1105 (2012)

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An ultrawide-bandwidth, superluminescent light-emitting diode (SLED) utilizing multiple layers of dots of tuned height is reported. Due to thermal effect, the superluminescent phenomenon is observed only under pulse-mode operation. The device exhibits a 3 dB bandwidth of 190 nm with central wavelength of 1020 nm under continuous-wave (cw) conditions. The maximum corresponding output power achieved in this device under cw and pulsed operation conditions are 0.54 mW and 17 mW, respectively.

© 2012 Optical Society of America

OCIS Codes
(160.6000) Materials : Semiconductor materials
(230.3670) Optical devices : Light-emitting diodes
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
(250.5230) Optoelectronics : Photoluminescence
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices

ToC Category:
Optical Devices

Original Manuscript: November 9, 2011
Revised Manuscript: January 26, 2012
Manuscript Accepted: January 26, 2012
Published: March 14, 2012

S. Haffouz, P. J. Barrios, R. Normandin, D. Poitras, and Z. Lu, "Ultrawide-bandwidth, superluminescent light-emitting diodes using InAs quantum dots of tuned height," Opt. Lett. 37, 1103-1105 (2012)

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