OSA's Digital Library

Optics Letters

Optics Letters

| RAPID, SHORT PUBLICATIONS ON THE LATEST IN OPTICAL DISCOVERIES

  • Editor: Alan E. Willner
  • Vol. 37, Iss. 6 — Mar. 15, 2012
  • pp: 1112–1114

n - ZnO / LaAlO 3 / p - Si heterojunction for visible-blind UV detection

D. S. Tasi, C. F. Kang, H. H. Wang, C. A. Lin, J. J. Ke, Y. H. Chu, and J. H. He  »View Author Affiliations


Optics Letters, Vol. 37, Issue 6, pp. 1112-1114 (2012)
http://dx.doi.org/10.1364/OL.37.001112


View Full Text Article

Enhanced HTML    Acrobat PDF (412 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations

Abstract

A visible-blind UV photodetector (PD) using a double heterojunction of n - ZnO / LaAlO 3 ( LAO ) / p - Si was demonstrated. Inserted LAO layers exhibit electrical insulating properties and serve as blocking layers for photoexcited electrons from p - Si to n - ZnO , leading to an enhanced rectification ratio and a visible-blind UV detectivity of the n - ZnO / LAO / p - Si PDs due to the high potential barrier between LAO and p - Si layers ( 2.0 eV ). These results support the use of n - ZnO / LAO / p - Si PDs in the visible-blind UV PDs in a visible-light environment.

© 2012 Optical Society of America

OCIS Codes
(040.7190) Detectors : Ultraviolet
(230.5160) Optical devices : Photodetectors
(250.0040) Optoelectronics : Detectors

ToC Category:
Detectors

History
Original Manuscript: November 16, 2011
Revised Manuscript: January 28, 2012
Manuscript Accepted: January 29, 2012
Published: March 15, 2012

Citation
D. S. Tasi, C. F. Kang, H. H. Wang, C. A. Lin, J. J. Ke, Y. H. Chu, and J. H. He, "n-ZnO/LaAlO3/p-Si heterojunction for visible-blind UV detection," Opt. Lett. 37, 1112-1114 (2012)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-37-6-1112


Sort:  Author  |  Year  |  Journal  |  Reset  

References

  1. E. Monroy, F. Omnes, and F. Calle, Semicond. Sci. Technol. 18, R33 (2003). [CrossRef]
  2. C. Soci, A. Zhang, B. Xiang, S. A. Dayeh, D. P. R. Aplin, J. Park, X. Y. Bao, Y. H. Lo, and D. L. Wang, Nano Lett. 7, 1003 (2007). [CrossRef]
  3. J. H. He, P. H. Chang, C. Y. Chen, and K. T. Tsai, Nanotechnology 20, 135701 (2009). [CrossRef]
  4. Q. Yang, X. Guo, W. Wang, Y. Zhang, S. Xu, D. H. Lien, and Z. L. Wang, ACS Nano 4, 6285 (2010). [CrossRef]
  5. T. Zhai, X. Fang, M. Liao, X. Xu, H. Zeng, B. Yoshio, and D. Golberg, Sensors 9, 6504 (2009). [CrossRef]
  6. C. Soci, A. Zhang, X. Bao, H. Kim, Y. Lo, and D. L. Wang, J. Nanosci. Nanotechnol. 10, 1430 (2010). [CrossRef]
  7. J. G. Lu, P. C. Chang, and Z. Fan, Mater. Sci. Eng. R.: Reports 52, 49 (2006). [CrossRef]
  8. K. Liu, M. Sakurai, and M. Aono, Sensors 10, 8604 (2010). [CrossRef]
  9. J. Zhou, Y. D. Gu, Y. F. Hu, W. J. Mai, P. H. Yeh, G. Bao, A. K. Sood, D. L. Polla, and Z. L. Wang, Appl. Phys. Lett. 94, 191103 (2009). [CrossRef]
  10. S. Mridha and D. Basak, J. Appl. Phys. 101, 083102 (2007). [CrossRef]
  11. J. H. He and C. H. Ho, Appl. Phys. Lett. 91, 233105 (2007). [CrossRef]
  12. I. S. Jeng, J. H. Kim, and S. Im, Appl. Phys. Lett. 83, 2946 (2003). [CrossRef]
  13. H. V. Wenckstern, S. Muller, G. Biehne, H. Hochmuth, M. Lorenz, and M. Grundmann, J. Electron. Mater. 39, 559 (2010). [CrossRef]
  14. K. Sun, Y. Jing, N. Park, C. Li, Y. Bando, and D. L. Wang, J. Am. Chem. Soc. 132, 15465 (2010). [CrossRef]
  15. C. A. Lin, D. S. Tsai, C. Y. Chen, and J. H. He, Nanoscale 3, 1195 (2011). [CrossRef]
  16. D. S. Tsai, C. A. Lin, W. C. Lien, H. C. Chang, Y. L. Wang, and J. H. He, ACS Nano 5, 7748 (2011). [CrossRef]
  17. X. D. Wang, J. Song, P. Li, J. H. Ryou, R. D. Dupuis, C. J. Summers, and Z. L. Wang, J. Am. Chem. Soc. 127, 7920 (2005). [CrossRef]
  18. B. E. Park, and H. Ishiwara, Appl. Phys. Lett. 82, 1197 (2003). [CrossRef]
  19. J. S. Tian, M. H. Liang, Y. T. Ho, Y. A. Liu, and L. Chang, J. Cryst. Growth 310, 777 (2008). [CrossRef]
  20. S. Xu and Z. L. Wang, Nano Res. 4, 1013 (2011). [CrossRef]
  21. S. M. Sze and K. K. Ng, Physics of Semiconductor Devices (Wiley, 2007), pp. 126–127.
  22. Y. F. Gu, X. M. Li, J. L. Zhao, W. D. Yu, X. D. Gao, and C. Yang, Solid State Commun. 143, 421 (2007). [CrossRef]
  23. H. Lin and C. W. Liu, Sensors 10, 8797 (2010). [CrossRef]
  24. L. F. Edge, D. G. Schlom, S. A. Chambers, E. Cicerrella, J. L. Freeouf, B. Holländer, and J. Schubert, Appl. Phys. Lett. 84, 726 (2004). [CrossRef]
  25. W. C. Lien, D. S. Tsai, S. H. Chiu, D. G. Senesky, R. Maboudian, A. P. Pisano, and J. H. He, IEEE Electron Device Lett. 32, 1564 (2011). [CrossRef]

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.

Figures

Fig. 1. Fig. 2. Fig. 3.
 
Fig. 4.
 

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited