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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 37, Iss. 6 — Mar. 15, 2012
  • pp: 1112–1114

n - ZnO / LaAlO 3 / p - Si heterojunction for visible-blind UV detection

D. S. Tasi, C. F. Kang, H. H. Wang, C. A. Lin, J. J. Ke, Y. H. Chu, and J. H. He  »View Author Affiliations

Optics Letters, Vol. 37, Issue 6, pp. 1112-1114 (2012)

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A visible-blind UV photodetector (PD) using a double heterojunction of n - ZnO / LaAlO 3 ( LAO ) / p - Si was demonstrated. Inserted LAO layers exhibit electrical insulating properties and serve as blocking layers for photoexcited electrons from p - Si to n - ZnO , leading to an enhanced rectification ratio and a visible-blind UV detectivity of the n - ZnO / LAO / p - Si PDs due to the high potential barrier between LAO and p - Si layers ( 2.0 eV ). These results support the use of n - ZnO / LAO / p - Si PDs in the visible-blind UV PDs in a visible-light environment.

© 2012 Optical Society of America

OCIS Codes
(040.7190) Detectors : Ultraviolet
(230.5160) Optical devices : Photodetectors
(250.0040) Optoelectronics : Detectors

ToC Category:

Original Manuscript: November 16, 2011
Revised Manuscript: January 28, 2012
Manuscript Accepted: January 29, 2012
Published: March 15, 2012

D. S. Tasi, C. F. Kang, H. H. Wang, C. A. Lin, J. J. Ke, Y. H. Chu, and J. H. He, "n-ZnO/LaAlO3/p-Si heterojunction for visible-blind UV detection," Opt. Lett. 37, 1112-1114 (2012)

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