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Selective Purcell enhancement of defect emission in ZnO thin films |
Optics Letters, Vol. 37, Issue 9, pp. 1538-1540 (2012)
http://dx.doi.org/10.1364/OL.37.001538
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Abstract
A zinc interstitial defect present but unobservable in ZnO thin films annealed at 500 °C in oxygen or in atmosphere was selectively detected by interaction of the film with an Ag surface-plasmon polariton. The time-dependent differential reflectivity of the ZnO near the ZnO/MgO interface exhibited a subpicosecond decay followed by a several nanosecond recovery, consistent with the Purcell-enhanced Zn interstitial luminescence seen in Ag–ZnO heterostructures. Heterostructures annealed at other temperatures showed significantly greater band-edge photoluminescence and no evidence of the Zn interstitial defect.
© 2012 Optical Society of America
OCIS Codes
(160.2220) Materials : Defect-center materials
(240.6490) Optics at surfaces : Spectroscopy, surface
(240.6680) Optics at surfaces : Surface plasmons
ToC Category:
Optics at Surfaces
History
Original Manuscript: December 27, 2011
Revised Manuscript: February 27, 2012
Manuscript Accepted: February 27, 2012
Published: May 1, 2012
Citation
B. J. Lawrie, R. Mu, and R. F. Haglund,, "Selective Purcell enhancement of defect emission in ZnO thin films," Opt. Lett. 37, 1538-1540 (2012)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-37-9-1538
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