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Optics Letters

| RAPID, SHORT PUBLICATIONS ON THE LATEST IN OPTICAL DISCOVERIES

  • Editor: Alan E. Willner
  • Vol. 37, Iss. 9 — May. 1, 2012
  • pp: 1556–1558

Improved color rendering of phosphor-converted white light-emitting diodes with dual-blue active layers and n-type AlGaN layer

Qi-Rong Yan, Yong Zhang, Shu-Ti Li, Qi-Ang Yan, Pei-Pei Shi, Qiao-Li Niu, Miao He, Guo-Ping Li, and Jun-Rui Li  »View Author Affiliations


Optics Letters, Vol. 37, Issue 9, pp. 1556-1558 (2012)
http://dx.doi.org/10.1364/OL.37.001556


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Abstract

An InGaN/GaN blue light-emitting diode (LED) structure and an InGaN/GaN blue-violet LED structure were grown sequentially on the same sapphire substrate by metal—organic chemical vapor deposition. It was found that the insertion of an n-type AlGaN layer below the dual blue-emitting active layers showed better spectral stability at the different driving current relative to the traditional p-type AlGaN electron-blocking layer. In addition, color rendering index of a Y3Al5O12:Ce3+ phosphor-converted white LED based on a dual blue-emitting chip with n-type AlGaN reached 91 at 20 mA, and Commission Internationale de L’Eclairage coordinates almost remained at the same point from 5 to 60 mA.

© 2012 Optical Society of America

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices

ToC Category:
Optical Devices

History
Original Manuscript: December 19, 2011
Revised Manuscript: March 10, 2012
Manuscript Accepted: March 14, 2012
Published: May 1, 2012

Citation
Qi-Rong Yan, Yong Zhang, Shu-Ti Li, Qi-Ang Yan, Pei-Pei Shi, Qiao-Li Niu, Miao He, Guo-Ping Li, and Jun-Rui Li, "Improved color rendering of phosphor-converted white light-emitting diodes with dual-blue active layers and n-type AlGaN layer," Opt. Lett. 37, 1556-1558 (2012)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-37-9-1556


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