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Influence of polarization-matched AlGaInN barriers in blue InGaN light-emitting diodes |
Optics Letters, Vol. 37, Issue 9, pp. 1574-1576 (2012)
http://dx.doi.org/10.1364/OL.37.001574
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Abstract
The advantages of blue InGaN light-emitting diodes with low bandgap energy and polarization-matched AlGaInN barriers are demonstrated numerically. Simulation results show that, besides the common benefit of enhanced electron–hole spatial overlap in the quantum well from the polarization-matched condition, the lower bandgap energy barriers can have additional advantages of more uniform carrier distribution among quantum wells while maintaining sufficient electron confinement. The internal quantum efficiencies of all the polarization-matched structures under study exhibit less severe efficiency droop, which is presumably attributed to the suppression of Auger recombination.
© 2012 Optical Society of America
OCIS Codes
(230.0250) Optical devices : Optoelectronics
(230.3670) Optical devices : Light-emitting diodes
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
ToC Category:
Optical Devices
History
Original Manuscript: February 1, 2012
Revised Manuscript: February 22, 2012
Manuscript Accepted: February 22, 2012
Published: May 2, 2012
Citation
Jih-Yuan Chang and Yen-Kuang Kuo, "Influence of polarization-matched AlGaInN barriers in blue InGaN light-emitting diodes," Opt. Lett. 37, 1574-1576 (2012)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-37-9-1574
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