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Optics Letters

| RAPID, SHORT PUBLICATIONS ON THE LATEST IN OPTICAL DISCOVERIES

  • Editor: Alan E. Willner
  • Vol. 38, Iss. 1 — Jan. 1, 2013
  • pp: 55–57

Low-noise single-photon avalanche diodes in 0.25 μm high-voltage CMOS technology

Fang-Ze Hsu, Jau-Yang Wu, and Sheng-Di Lin  »View Author Affiliations


Optics Letters, Vol. 38, Issue 1, pp. 55-57 (2013)
http://dx.doi.org/10.1364/OL.38.000055


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Abstract

By using 0.25 μm high-voltage CMOS technology, we have designed and fabricated a structure of single-photon detectors. The new single-photon avalanche diode (SPAD) has (to our knowledge) the lowest dark count rate per unit area at room temperature without any technology customization. Our design is promising for realizing low-cost and high-performance SPAD arrays for imaging applications.

© 2012 Optical Society of America

OCIS Codes
(230.0040) Optical devices : Detectors
(040.1345) Detectors : Avalanche photodiodes (APDs)

ToC Category:
Detectors

History
Original Manuscript: September 26, 2012
Revised Manuscript: November 12, 2012
Manuscript Accepted: November 23, 2012
Published: December 20, 2012

Citation
Fang-Ze Hsu, Jau-Yang Wu, and Sheng-Di Lin, "Low-noise single-photon avalanche diodes in 0.25 μm high-voltage CMOS technology," Opt. Lett. 38, 55-57 (2013)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-38-1-55


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