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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 38, Iss. 10 — May. 15, 2013
  • pp: 1682–1684

Crossover from photodarkening to photobleaching in a-GexSe100-x thin films

Rakesh Ranjan Kumar, A. R. Barik, E. M. Vinod, Mukund Bapna, K. S. Sangunni, and K. V. Adarsh  »View Author Affiliations

Optics Letters, Vol. 38, Issue 10, pp. 1682-1684 (2013)

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In this Letter, we present the interesting results of photodarkening (PD), transition toward photostability, and a slow crossover from PD to photobleaching when composition of the chalcogenide glassy thin film changes from Ge-deficient to rich. A subsequent Raman analysis on these as-prepared and irradiated samples provide the direct evidence of photoinduced structural rearrangement, i.e., photocrystallization of Se and the removal of edge-sharing GeSe4 tetrahedra. Further, our experimental results clearly demonstrate that light-induced effects can be effectively controlled by choosing the right composition and provide valuable information on synthesizing photostable/sensitive glasses.

© 2013 Optical Society of America

OCIS Codes
(160.2750) Materials : Glass and other amorphous materials
(300.6450) Spectroscopy : Spectroscopy, Raman
(310.6860) Thin films : Thin films, optical properties
(160.5335) Materials : Photosensitive materials

ToC Category:

Original Manuscript: January 8, 2013
Revised Manuscript: April 2, 2013
Manuscript Accepted: April 17, 2013
Published: May 10, 2013

Rakesh Ranjan Kumar, A. R. Barik, E. M. Vinod, Mukund Bapna, K. S. Sangunni, and K. V. Adarsh, "Crossover from photodarkening to photobleaching in a-GexSe100-x thin films," Opt. Lett. 38, 1682-1684 (2013)

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Fig. 1. Fig. 2. Fig. 3.

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