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Optics Letters

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  • Editor: Alan E. Willner
  • Vol. 38, Iss. 11 — Jun. 1, 2013
  • pp: 1760–1762

C- and L-band erbium-doped waveguide lasers with wafer-scale silicon nitride cavities

Purnawirman, J. Sun, T. N. Adam, G. Leake, D. Coolbaugh, J. D. B. Bradley, E. Shah Hosseini, and M. R. Watts  »View Author Affiliations


Optics Letters, Vol. 38, Issue 11, pp. 1760-1762 (2013)
http://dx.doi.org/10.1364/OL.38.001760


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Abstract

We report on integrated erbium-doped waveguide lasers designed for silicon photonic systems. The distributed Bragg reflector laser cavities consist of silicon nitride waveguide and grating features defined by wafer-scale immersion lithography and a top erbium-doped aluminum oxide layer deposited as the final step in the fabrication process. The resulting inverted ridge waveguide yields high optical intensity overlap with the active medium for both the 0.98 μm pump (89%) and 1.5 μm laser (87%) wavelengths with a pump–laser intensity overlap of > 93 % . We obtain output powers of up to 5 mW and show lasing at widely spaced wavelengths within both the C and L bands of the erbium gain spectrum (1536, 1561, and 1596 nm).

© 2013 Optical Society of America

OCIS Codes
(130.0130) Integrated optics : Integrated optics
(130.2790) Integrated optics : Guided waves
(130.3120) Integrated optics : Integrated optics devices
(140.3460) Lasers and laser optics : Lasers

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: March 18, 2013
Revised Manuscript: April 16, 2013
Manuscript Accepted: April 21, 2013
Published: May 20, 2013

Citation
Purnawirman, J. Sun, T. N. Adam, G. Leake, D. Coolbaugh, J. D. B. Bradley, E. Shah Hosseini, and M. R. Watts, "C- and L-band erbium-doped waveguide lasers with wafer-scale silicon nitride cavities," Opt. Lett. 38, 1760-1762 (2013)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-38-11-1760


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References

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