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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 38, Iss. 12 — Jun. 15, 2013
  • pp: 2047–2049

Bulk optical absorption of high resistivity silicon at 1550 nm

Jerome Degallaix, Raffaele Flaminio, Danièle Forest, Massimo Granata, Christophe Michel, Laurent Pinard, Teddy Bertrand, and Gianpietro Cagnoli  »View Author Affiliations

Optics Letters, Vol. 38, Issue 12, pp. 2047-2049 (2013)

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We report on the measurement of the optical absorption of bulk crystalline silicon at 1550 nm. Using the photodeflection technique, absorption as low as 5ppm/cm has been measured on a sample with a resistivity of 10kΩ·cm. The absorption as a function of the resistivity has been derived for n-type silicon.

© 2013 Optical Society of America

OCIS Codes
(040.6040) Detectors : Silicon
(300.1030) Spectroscopy : Absorption

ToC Category:

Original Manuscript: April 2, 2013
Revised Manuscript: May 13, 2013
Manuscript Accepted: May 13, 2013
Published: June 4, 2013

Jerome Degallaix, Raffaele Flaminio, Danièle Forest, Massimo Granata, Christophe Michel, Laurent Pinard, Teddy Bertrand, and Gianpietro Cagnoli, "Bulk optical absorption of high resistivity silicon at 1550 nm," Opt. Lett. 38, 2047-2049 (2013)

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