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Optics Letters

| RAPID, SHORT PUBLICATIONS ON THE LATEST IN OPTICAL DISCOVERIES

  • Editor: Alan E. Willner
  • Vol. 38, Iss. 12 — Jun. 15, 2013
  • pp: 2113–2115

MgZnO p–n heterostructure light-emitting devices

Ji-Shan Liu, Chong-Xin Shan, Bing-Hui Li, Zhen-Zhong Zhang, Ke-Wei Liu, and De-Zhen Shen  »View Author Affiliations


Optics Letters, Vol. 38, Issue 12, pp. 2113-2115 (2013)
http://dx.doi.org/10.1364/OL.38.002113


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Abstract

MgZnO heterostructure light-emitting devices (LEDs) have been fabricated from p-Mg0.35Zn0.65O/n-Mg0.20Zn0.80O structures, and the p-type Mg0.35Zn0.65O film was realized using a lithium–nitrogen codoping method. Obvious ultraviolet emission peaked at around 355 nm dominates the electroluminescence (EL) spectra of the device at room temperature, which comes from the near-band-edge emission of the n-type Mg0.20Zn0.80O film. This is the first report on MgZnO heterostructured LEDs and the shortest EL emission ever reported in ZnO-based p-n junction LEDs to the best of our knowledge.

© 2013 Optical Society of America

OCIS Codes
(250.0250) Optoelectronics : Optoelectronics
(260.3800) Physical optics : Luminescence
(260.7190) Physical optics : Ultraviolet
(310.6845) Thin films : Thin film devices and applications

ToC Category:
Optical Devices

History
Original Manuscript: March 4, 2013
Revised Manuscript: May 9, 2013
Manuscript Accepted: May 13, 2013
Published: June 11, 2013

Citation
Ji-Shan Liu, Chong-Xin Shan, Bing-Hui Li, Zhen-Zhong Zhang, Ke-Wei Liu, and De-Zhen Shen, "MgZnO p–n heterostructure light-emitting devices," Opt. Lett. 38, 2113-2115 (2013)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-38-12-2113


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