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Optics Letters

Optics Letters

| RAPID, SHORT PUBLICATIONS ON THE LATEST IN OPTICAL DISCOVERIES

  • Editor: Alan E. Willner
  • Vol. 38, Iss. 14 — Jul. 15, 2013
  • pp: 2404–2406

Tapered InAs/InGaAs quantum dot semiconductor optical amplifier design for enhanced gain and beam quality

Charis Mesaritakis, Alexandros Kapsalis, Hercules Simos, Christos Simos, Michel Krakowski, Igor Krestnikov, and Dimitris Syvridis  »View Author Affiliations


Optics Letters, Vol. 38, Issue 14, pp. 2404-2406 (2013)
http://dx.doi.org/10.1364/OL.38.002404


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Abstract

In this Letter, a design for a tapered InAs/InGaAs quantum dot semiconductor optical amplifier is proposed and experimentally evaluated. The amplifier’s geometry was optimized in order to reduce gain saturation effects and improve gain efficiency and beam quality. The experimental measurements confirm that the proposed amplifier allows for an elevated optical gain in the saturation regime, whereas a five-fold increase in the coupling efficiency to a standard single mode optical fiber is observed, due to the improvement in the beam quality factor M2 of the emitted beam.

© 2013 Optical Society of America

OCIS Codes
(130.5990) Integrated optics : Semiconductors
(220.0220) Optical design and fabrication : Optical design and fabrication
(230.4480) Optical devices : Optical amplifiers

ToC Category:
Optical Devices

History
Original Manuscript: April 25, 2013
Revised Manuscript: June 10, 2013
Manuscript Accepted: June 11, 2013
Published: July 5, 2013

Citation
Charis Mesaritakis, Alexandros Kapsalis, Hercules Simos, Christos Simos, Michel Krakowski, Igor Krestnikov, and Dimitris Syvridis, "Tapered InAs/InGaAs quantum dot semiconductor optical amplifier design for enhanced gain and beam quality," Opt. Lett. 38, 2404-2406 (2013)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-38-14-2404

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