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Optics Letters

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  • Editor: Alan E. Willner
  • Vol. 38, Iss. 15 — Aug. 1, 2013
  • pp: 2750–2753

InP-based short-wave infrared and midwave infrared photodiodes using a novel type-II strain-compensated quantum well absorption region

Baile Chen and Archie L. Holmes, Jr.  »View Author Affiliations


Optics Letters, Vol. 38, Issue 15, pp. 2750-2753 (2013)
http://dx.doi.org/10.1364/OL.38.002750


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Abstract

We report on InP-based p-type/intrinsic/n-type (PIN) photodiodes with a novel strain-compensated type-II InGaAs/GaAsSb quantum well active region. The device has optical response out to 3.0 μm, specific detectivity (D*) of 7.73×109cmHz0.5/W at 290 K for 2.7 μm. These preliminary results show that this novel strain-compensated approach leads to similar performance when compared to a conventional strain-compensated approach.

© 2013 Optical Society of America

OCIS Codes
(230.5170) Optical devices : Photodiodes
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
(260.3060) Physical optics : Infrared
(250.0040) Optoelectronics : Detectors

ToC Category:
Optical Devices

History
Original Manuscript: May 7, 2013
Revised Manuscript: July 3, 2013
Manuscript Accepted: July 3, 2013
Published: July 25, 2013

Citation
Baile Chen and Archie L. Holmes, "InP-based short-wave infrared and midwave infrared photodiodes using a novel type-II strain-compensated quantum well absorption region," Opt. Lett. 38, 2750-2753 (2013)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-38-15-2750


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