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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 38, Iss. 16 — Aug. 15, 2013
  • pp: 3032–3035

Independence of elemental intensity ratio on plasma property during laser-induced breakdown spectroscopy

Chan-Kyu Kim, Jung-Hwan In, Seok-Hee Lee, and Sungho Jeong  »View Author Affiliations

Optics Letters, Vol. 38, Issue 16, pp. 3032-3035 (2013)

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The authors report that the elemental composition ratio of Ga to In in a CuIn1xGaxSe2 compound semiconductor, a thin-film solar cell material, can be measured with little influence of plasma property changes by laser-induced breakdown spectroscopy (λ=1064nm, τ=5ns). It is shown that the similarity in excitation energy levels of the selected Ga and In emission lines and the fact that these elements belong to the same group of the periodic table are the critical factors ensuring the independence of intensity ratio on plasma conditions.

© 2013 Optical Society of America

OCIS Codes
(160.6000) Materials : Semiconductor materials
(310.0310) Thin films : Thin films
(300.6365) Spectroscopy : Spectroscopy, laser induced breakdown

ToC Category:

Original Manuscript: May 21, 2013
Revised Manuscript: July 9, 2013
Manuscript Accepted: July 9, 2013
Published: August 7, 2013

Chan-Kyu Kim, Jung-Hwan In, Seok-Hee Lee, and Sungho Jeong, "Independence of elemental intensity ratio on plasma property during laser-induced breakdown spectroscopy," Opt. Lett. 38, 3032-3035 (2013)

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Fig. 1. Fig. 2. Fig. 3.

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