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Optics Letters

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  • Editor: Alan E. Willner
  • Vol. 38, Iss. 16 — Aug. 15, 2013
  • pp: 3165–3168

Low polarization-sensitive asymmetric multi-quantum well semiconductor amplifier for next-generation optical access networks

Julie E. Nkanta, Ramón Maldonado-Basilio, Kaiser Khan, Abdessamad Benhsaien, Sawsan Abdul-Majid, Jessica Zhang, and Trevor J. Hall  »View Author Affiliations


Optics Letters, Vol. 38, Issue 16, pp. 3165-3168 (2013)
http://dx.doi.org/10.1364/OL.38.003165


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Abstract

A broadband and low-polarization-sensitive multi-quantum well semiconductor optical amplifier with an asymmetric structure is reported for operation in the E-band wavelength range. A gain peak of 20 dB for a bandwidth of more than 50 nm is measured for both TE and TM polarizations. A maximum polarization sensitivity of 3 dB is measured for a broad wavelength range from 1340 to 1440 nm.

© 2013 Optical Society of America

OCIS Codes
(060.4510) Fiber optics and optical communications : Optical communications
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
(250.5980) Optoelectronics : Semiconductor optical amplifiers

ToC Category:
Optoelectronics

History
Original Manuscript: May 28, 2013
Revised Manuscript: July 8, 2013
Manuscript Accepted: July 19, 2013
Published: August 15, 2013

Citation
Julie E. Nkanta, Ramón Maldonado-Basilio, Kaiser Khan, Abdessamad Benhsaien, Sawsan Abdul-Majid, Jessica Zhang, and Trevor J. Hall, "Low polarization-sensitive asymmetric multi-quantum well semiconductor amplifier for next-generation optical access networks," Opt. Lett. 38, 3165-3168 (2013)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-38-16-3165


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