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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 38, Iss. 17 — Sep. 1, 2013
  • pp: 3241–3244

Design of Si/SiO2 micropillar cavities for Purcell-enhanced single photon emission at 1.55 μm from InAs/InP quantum dots

Hai-Zhi Song, Kazuya Takemoto, Toshiyuki Miyazawa, Motomu Takatsu, Satoshi Iwamoto, Tsuyoshi Yamamoto, and Yasuhiko Arakawa  »View Author Affiliations

Optics Letters, Vol. 38, Issue 17, pp. 3241-3244 (2013)

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Numerical simulations were carried out on micropillar cavities consisting of Si/SiO2 distributed Bragg reflectors (DBRs) with an InP spacer layer. Owing to a large refractive index contrast of 2 in DBRs, cavities with just 4/6.5 top/bottom DBR pairs that give a low pillar height (4.5μm), have noticeable Purcell-enhancement effect in the 1.55-μm band. With careful designs on cavities with diameters of 2.30μm, a quality factor of up to 3300, a nominal Purcell factor of up to 110, and an output efficiency of 60% are obtainable. These results ensure improvement of operation frequency and enhancement of photon indistinguishability for 1.55-μm single photon sources based on InAs/InP quantum dots.

© 2013 Optical Society of America

OCIS Codes
(230.3990) Optical devices : Micro-optical devices
(310.4165) Thin films : Multilayer design
(270.5585) Quantum optics : Quantum information and processing
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices

ToC Category:
Optical Devices

Original Manuscript: June 3, 2013
Revised Manuscript: July 29, 2013
Manuscript Accepted: July 30, 2013
Published: August 20, 2013

Hai-Zhi Song, Kazuya Takemoto, Toshiyuki Miyazawa, Motomu Takatsu, Satoshi Iwamoto, Tsuyoshi Yamamoto, and Yasuhiko Arakawa, "Design of Si/SiO2 micropillar cavities for Purcell-enhanced single photon emission at 1.55 μm from InAs/InP quantum dots," Opt. Lett. 38, 3241-3244 (2013)

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