A light-emitting device consisting of a two-dimensional regularly patterned InGaN/GaN quantum well (QW) nanorod (NR) light-emitting diode (LED) array is implemented and characterized. The NR p-i-n structure includes n-GaN NR core and essentially conformal p-GaN shell. The active regions include nonpolar sidewall QWs and polar top-face QWs. A conformal layer of transparent GaZnO of low resistivity is deposited onto the NR LED structure for spreading the injection current over the sidewalls. It is found that the blue-shift range of the output spectral peak in increasing injection current is smaller than that of a planar LED of about the same operation wavelength in a similar variation range of injection current density although it is nonzero. The small blue-shift range is attributed to the mixed emission contributions from the nonpolar sidewall QWs and polar top-face QWs.
© 2013 Optical Society of America
Original Manuscript: June 4, 2013
Revised Manuscript: August 4, 2013
Manuscript Accepted: August 4, 2013
Published: August 26, 2013
Horng-Shyang Chen, Yu-Feng Yao, Che-Hao Liao, Charng-Gan Tu, Chia-Ying Su, Wen-Ming Chang, Yean-Woei Kiang, and C. C. Yang, "Light-emitting device with regularly patterned growth of an InGaN/GaN quantum-well nanorod light-emitting diode array," Opt. Lett. 38, 3370-3373 (2013)