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Optics Letters

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  • Editor: Alan E. Willner
  • Vol. 38, Iss. 17 — Sep. 1, 2013
  • pp: 3370–3373

Light-emitting device with regularly patterned growth of an InGaN/GaN quantum-well nanorod light-emitting diode array

Horng-Shyang Chen, Yu-Feng Yao, Che-Hao Liao, Charng-Gan Tu, Chia-Ying Su, Wen-Ming Chang, Yean-Woei Kiang, and C. C. Yang  »View Author Affiliations


Optics Letters, Vol. 38, Issue 17, pp. 3370-3373 (2013)
http://dx.doi.org/10.1364/OL.38.003370


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Abstract

A light-emitting device consisting of a two-dimensional regularly patterned InGaN/GaN quantum well (QW) nanorod (NR) light-emitting diode (LED) array is implemented and characterized. The NR p-i-n structure includes n-GaN NR core and essentially conformal p-GaN shell. The active regions include nonpolar sidewall QWs and polar top-face QWs. A conformal layer of transparent GaZnO of low resistivity is deposited onto the NR LED structure for spreading the injection current over the sidewalls. It is found that the blue-shift range of the output spectral peak in increasing injection current is smaller than that of a planar LED of about the same operation wavelength in a similar variation range of injection current density although it is nonzero. The small blue-shift range is attributed to the mixed emission contributions from the nonpolar sidewall QWs and polar top-face QWs.

© 2013 Optical Society of America

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(160.4236) Materials : Nanomaterials

ToC Category:
Materials

History
Original Manuscript: June 4, 2013
Revised Manuscript: August 4, 2013
Manuscript Accepted: August 4, 2013
Published: August 26, 2013

Citation
Horng-Shyang Chen, Yu-Feng Yao, Che-Hao Liao, Charng-Gan Tu, Chia-Ying Su, Wen-Ming Chang, Yean-Woei Kiang, and C. C. Yang, "Light-emitting device with regularly patterned growth of an InGaN/GaN quantum-well nanorod light-emitting diode array," Opt. Lett. 38, 3370-3373 (2013)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-38-17-3370


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