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Optics Letters

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  • Editor: Alan E. Willner
  • Vol. 38, Iss. 18 — Sep. 15, 2013
  • pp: 3669–3672

High temperature luminescence of Dy3+ in crystalline silicon in the optical communication and eye-safe spectral regions

M. A. Lourenço, Z. Mustafa, W. Ludurczak, L. Wong, R. M. Gwilliam, and K. P. Homewood  »View Author Affiliations


Optics Letters, Vol. 38, Issue 18, pp. 3669-3672 (2013)
http://dx.doi.org/10.1364/OL.38.003669


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Abstract

We report on photoluminescence in the 1.3 and 1.7 μm spectral ranges in silicon doped with dysprosium. This is attributed to the Dy 3 + internal transitions between the second Dy 3 + excited state and the ground state, and between the third Dy 3 + excited state and the ground state. Luminescence is achieved by Dy implantation into Si substrates codoped with boron, to form dislocation loops, and show a strong dependence on fabrication process. The spectra consist of several sharp lines with the strongest emission at 1736 nm, observed up to 200 K. No Dy 3 + luminescence is observed in samples without B codoping, showing the paramount importance of dislocation loops to enable the Dy emission.

© 2013 Optical Society of America

OCIS Codes
(160.5690) Materials : Rare-earth-doped materials
(160.6000) Materials : Semiconductor materials
(250.5230) Optoelectronics : Photoluminescence
(300.6340) Spectroscopy : Spectroscopy, infrared

ToC Category:
Materials

History
Original Manuscript: May 22, 2013
Revised Manuscript: August 13, 2013
Manuscript Accepted: August 19, 2013
Published: September 13, 2013

Citation
M. A. Lourenço, Z. Mustafa, W. Ludurczak, L. Wong, R. M. Gwilliam, and K. P. Homewood, "High temperature luminescence of Dy3+ in crystalline silicon in the optical communication and eye-safe spectral regions," Opt. Lett. 38, 3669-3672 (2013)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-38-18-3669


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