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Optics Letters

Optics Letters

| RAPID, SHORT PUBLICATIONS ON THE LATEST IN OPTICAL DISCOVERIES

  • Editor: Alan E. Willner
  • Vol. 38, Iss. 20 — Oct. 15, 2013
  • pp: 4224–4227

Low-temperature growth of near-infrared luminescent Bi-doped SiOxNy thin films

Minoru Fujii, Satoshi Morimoto, Shohei Kitano, Kenji Imakita, Jianrong Qiu, and Hong-Tao Sun  »View Author Affiliations


Optics Letters, Vol. 38, Issue 20, pp. 4224-4227 (2013)
http://dx.doi.org/10.1364/OL.38.004224


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Abstract

Bi-doped siliconoxynitride (SiON:Bi) thin films were prepared by a sputtering method and the photoluminescence (PL) properties were studied. Without any thermal treatments, broad Bi-related luminescence was observed in the near-infrared (NIR) range. The luminescence efficiency depended strongly on the film composition. It was found that N atoms play a crucial role for the formation of Bi NIR luminescence centers. The effect of annealing on the luminescence efficiency was also studied. The optimum annealing temperature to have the largest number of Bi NIR luminescence centers depended strongly on the film composition and it was lower for films with lower N concentration. The PL excitation spectra revealed that two different Bi NIR luminescence centers exist in the films.

© 2013 Optical Society of America

OCIS Codes
(160.4670) Materials : Optical materials
(160.4760) Materials : Optical properties
(300.6280) Spectroscopy : Spectroscopy, fluorescence and luminescence

ToC Category:
Materials

History
Original Manuscript: August 13, 2013
Revised Manuscript: September 12, 2013
Manuscript Accepted: September 14, 2013
Published: October 14, 2013

Citation
Minoru Fujii, Satoshi Morimoto, Shohei Kitano, Kenji Imakita, Jianrong Qiu, and Hong-Tao Sun, "Low-temperature growth of near-infrared luminescent Bi-doped SiOxNy thin films," Opt. Lett. 38, 4224-4227 (2013)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-38-20-4224

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