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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 38, Iss. 20 — Oct. 15, 2013
  • pp: 4262–4264

Anisotropic electro-optic effect on InGaAs quantum dot chain modulators

Wei Liu, Baolai Liang, Diana Huffaker, and Harold Fetterman  »View Author Affiliations

Optics Letters, Vol. 38, Issue 20, pp. 4262-4264 (2013)

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We investigated the anisotropic electro-optic (EO) effect on InGaAs quantum dot (QD) chain modulators. The linear EO coefficients were determined as 24.3pm/V (33.8pm/V) along the [011] direction and 30.6pm/V (40.3pm/V) along the [011¯] direction at 1.55 μm (1.32 μm) operational wavelength. The corresponding half-wave voltages (Vπs) were measured to be 5.35 V (4.35 V) and 4.65 V (3.86 V) at 1.55 μm (1.32 μm) wavelength. This is the first report on the anisotropic EO effect on QD chain structures. These modulators have 3 dB bandwidths larger than 10 GHz.

© 2013 Optical Society of America

OCIS Codes
(230.2090) Optical devices : Electro-optical devices
(160.4236) Materials : Nanomaterials
(250.4110) Optoelectronics : Modulators

ToC Category:
Optical Devices

Original Manuscript: August 6, 2013
Revised Manuscript: September 14, 2013
Manuscript Accepted: September 17, 2013
Published: October 15, 2013

Virtual Issues
October 15, 2013 Spotlight on Optics

Wei Liu, Baolai Liang, Diana Huffaker, and Harold Fetterman, "Anisotropic electro-optic effect on InGaAs quantum dot chain modulators," Opt. Lett. 38, 4262-4264 (2013)

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