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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 38, Iss. 21 — Nov. 1, 2013
  • pp: 4339–4341

Influence of the incident laser pulse energy on jitter time of GaAs photoconductive semiconductor switches

Wei Shi, Huai-meng Gui, Lin Zhang, Meng-xia Li, Cheng Ma, Lu-yi Wang, and Huan Jiang  »View Author Affiliations

Optics Letters, Vol. 38, Issue 21, pp. 4339-4341 (2013)

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We have experimentally investigated the jitter time of a GaAs photoconductive switch (PCSS) when it is triggered by a laser pulse with 30 ns pulse width and 1064 nm wavelength. It is found that the jitter time decreases as the incident laser pulse energy increases from 0.40 to 1.6 mJ. In addition, a theoretical analysis indicates that the jitter time is proportional to relative deviation of the laser pulse energy. This work provides a path to improve the performance of the PCSS, which is used in applications such as a high time precision synchronous control system and ultrawideband radiation source.

© 2013 Optical Society of America

OCIS Codes
(230.0250) Optical devices : Optoelectronics
(320.7080) Ultrafast optics : Ultrafast devices
(320.7100) Ultrafast optics : Ultrafast measurements

ToC Category:
Ultrafast Optics

Original Manuscript: July 31, 2013
Revised Manuscript: September 13, 2013
Manuscript Accepted: September 19, 2013
Published: October 21, 2013

Wei Shi, Huai-meng Gui, Lin Zhang, Meng-xia Li, Cheng Ma, Lu-yi Wang, and Huan Jiang, "Influence of the incident laser pulse energy on jitter time of GaAs photoconductive semiconductor switches," Opt. Lett. 38, 4339-4341 (2013)

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