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Optics Letters

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  • Editor: Alan E. Willner
  • Vol. 38, Iss. 22 — Nov. 15, 2013
  • pp: 4542–4545

Gigahertz to terahertz tunable all-optical single-side-band microwave generation via semiconductor optical amplifier gain engineering

Fangxin Li and Amr S. Helmy  »View Author Affiliations


Optics Letters, Vol. 38, Issue 22, pp. 4542-4545 (2013)
http://dx.doi.org/10.1364/OL.38.004542


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Abstract

We propose and demonstrate a technique to generate low-noise broadly tunable single-side-band microwaves using cascaded semiconductor optical amplifiers (SOAs) using no RF bias. The proposed technique uses no RF components and is based on polarization-state controlled gain-induced four-wave mixing in SOAs. Microwave generation from 40 to 875 GHz with a line-width 22KHz is experimentally demonstrated.

© 2013 Optical Society of America

OCIS Codes
(130.5990) Integrated optics : Semiconductors
(190.0190) Nonlinear optics : Nonlinear optics
(350.4010) Other areas of optics : Microwaves

ToC Category:
Integrated Optics

History
Original Manuscript: August 9, 2013
Revised Manuscript: September 27, 2013
Manuscript Accepted: September 27, 2013
Published: November 4, 2013

Citation
Fangxin Li and Amr S. Helmy, "Gigahertz to terahertz tunable all-optical single-side-band microwave generation via semiconductor optical amplifier gain engineering," Opt. Lett. 38, 4542-4545 (2013)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-38-22-4542


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