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Optics Letters

| RAPID, SHORT PUBLICATIONS ON THE LATEST IN OPTICAL DISCOVERIES

  • Editor: Alan E. Willner
  • Vol. 38, Iss. 22 — Nov. 15, 2013
  • pp: 4656–4658

Hybrid single quantum well InP/Si nanobeam lasers for silicon photonics

William S. Fegadolli, Se-Heon Kim, Pablo Aitor Postigo, and Axel Scherer  »View Author Affiliations


Optics Letters, Vol. 38, Issue 22, pp. 4656-4658 (2013)
http://dx.doi.org/10.1364/OL.38.004656


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Abstract

We report on a hybrid InP/Si photonic crystal nanobeam laser emitting at 1578 nm with a low threshold power of 14.7μW. Laser gain is provided from a single InAsP quantum well embedded in a 155 nm InP layer bonded on a standard silicon-on-insulator wafer. This miniaturized nanolaser, with an extremely small modal volume of 0.375(λ/n)3, is a promising and efficient light source for silicon photonics.

© 2013 Optical Society of America

OCIS Codes
(130.0130) Integrated optics : Integrated optics
(140.0140) Lasers and laser optics : Lasers and laser optics
(160.5298) Materials : Photonic crystals

ToC Category:
Integrated Optics

History
Original Manuscript: August 27, 2013
Revised Manuscript: October 7, 2013
Manuscript Accepted: October 7, 2013
Published: November 8, 2013

Citation
William S. Fegadolli, Se-Heon Kim, Pablo Aitor Postigo, and Axel Scherer, "Hybrid single quantum well InP/Si nanobeam lasers for silicon photonics," Opt. Lett. 38, 4656-4658 (2013)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-38-22-4656


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