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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 38, Iss. 22 — Nov. 15, 2013
  • pp: 4774–4776

Low cross-talk 2 × 2 silicon electro-optic switch matrix with a double-gate configuration

Jiejiang Xing, Zhiyong Li, Yude Yu, and Jinzhong Yu  »View Author Affiliations

Optics Letters, Vol. 38, Issue 22, pp. 4774-4776 (2013)

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In this study, a low cross-talk 2×2 silicon electro-optic switch matrix based on a double-gate configuration is proposed and experimentally demonstrated. The switch matrix consists of four Mach–Zehnder-based 2×2 switching elements with 400 μm long modulation arms. Low cross-talk values of 31 and 43dB are, respectively, obtained for the “cross” and “bar” states over a 40 nm wide wavelength range around 1550 nm. The values for the total steady-state power consumption of the “cross” and “bar” states are 40.8 and 19.1 mW, respectively.

© 2013 Optical Society of America

OCIS Codes
(200.4650) Optics in computing : Optical interconnects
(130.4815) Integrated optics : Optical switching devices

ToC Category:
Integrated Optics

Original Manuscript: September 23, 2013
Revised Manuscript: October 14, 2013
Manuscript Accepted: October 14, 2013
Published: November 12, 2013

Jiejiang Xing, Zhiyong Li, Yude Yu, and Jinzhong Yu, "Low cross-talk 2 × 2 silicon electro-optic switch matrix with a double-gate configuration," Opt. Lett. 38, 4774-4776 (2013)

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