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Optics Letters

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  • Editor: Alan E. Willner
  • Vol. 38, Iss. 22 — Nov. 15, 2013
  • pp: 4825–4828

Arrayed narrow linewidth erbium-doped waveguide-distributed feedback lasers on an ultra-low-loss silicon-nitride platform

Michael Belt, Taran Huffman, Michael L. Davenport, Wenzao Li, Jonathon S. Barton, and Daniel J. Blumenthal  »View Author Affiliations


Optics Letters, Vol. 38, Issue 22, pp. 4825-4828 (2013)
http://dx.doi.org/10.1364/OL.38.004825


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Abstract

We demonstrate an array of erbium-doped waveguide-distributed feedback lasers on an ultra-low-loss Si3N4 platform. Sidewall gratings providing the lasing feedback are defined in the silicon-nitride layer using 248 nm stepper lithography, while the gain is provided by a reactive co-sputtered erbium-doped aluminum-oxide layer. We observe lasing output over a 12 nm wavelength range (1531–1543 nm) from the array of five separate lasers. Output powers of 8 μW and lasing linewidths of 501 kHz are obtained. Single-mode operation is confirmed, with side-mode suppression ratios over 35 dB for all designs.

© 2013 Optical Society of America

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(140.3460) Lasers and laser optics : Lasers
(140.3490) Lasers and laser optics : Lasers, distributed-feedback

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: July 16, 2013
Revised Manuscript: September 18, 2013
Manuscript Accepted: October 16, 2013
Published: November 14, 2013

Citation
Michael Belt, Taran Huffman, Michael L. Davenport, Wenzao Li, Jonathon S. Barton, and Daniel J. Blumenthal, "Arrayed narrow linewidth erbium-doped waveguide-distributed feedback lasers on an ultra-low-loss silicon-nitride platform," Opt. Lett. 38, 4825-4828 (2013)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-38-22-4825


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