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Optics Letters

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  • Editor: Alan E. Willner
  • Vol. 38, Iss. 22 — Nov. 15, 2013
  • pp: 4849–4852

Suppression of free carrier absorption in silicon using multislot SiO2/nc-Si waveguides

Yijing Fu, Halina Krzyżanowska, Karl S. Ni, and Philippe M. Fauchet  »View Author Affiliations


Optics Letters, Vol. 38, Issue 22, pp. 4849-4852 (2013)
http://dx.doi.org/10.1364/OL.38.004849


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Abstract

Free carrier absorption (FCA) in silicon is the major obstacle toward achieving optical gain in Si nanostructure systems. In this Letter, we present experimental results of pump-induced loss for TE and TM polarization in multislot SiO2/nc-Si waveguides. Continuous wavelength and ultrafast studies of carriers excited in the nc-Si multilayers reveal strong suppression of transmission loss related to FCA in Si nanostructures for TM-polarized probe light. We demonstrate theoretically and experimentally that FCA may be reduced under TM polarization as much as 9 times compared to TE polarization.

© 2013 Optical Society of America

OCIS Codes
(230.4170) Optical devices : Multilayers
(230.7400) Optical devices : Waveguides, slab
(250.5300) Optoelectronics : Photonic integrated circuits
(320.7120) Ultrafast optics : Ultrafast phenomena

ToC Category:
Optical Devices

History
Original Manuscript: August 1, 2013
Revised Manuscript: August 29, 2013
Manuscript Accepted: October 18, 2013
Published: November 14, 2013

Citation
Yijing Fu, Halina Krzyżanowska, Karl S. Ni, and Philippe M. Fauchet, "Suppression of free carrier absorption in silicon using multislot SiO2/nc-Si waveguides," Opt. Lett. 38, 4849-4852 (2013)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-38-22-4849


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