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Optics Letters

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  • Editor: Alan E. Willner
  • Vol. 38, Iss. 22 — Nov. 15, 2013
  • pp: 4868–4871

1.06-μm InGaAs/GaAs multiple-quantum-well optical thyristor lasers with a PiNiN structure

Huolei Wang, Junping Mi, Xuliang Zhou, Laura Meriggi, Matthew Steer, Bifeng Cui, Weixi Chen, Jiaoqing Pan, and Ying Ding  »View Author Affiliations


Optics Letters, Vol. 38, Issue 22, pp. 4868-4871 (2013)
http://dx.doi.org/10.1364/OL.38.004868


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Abstract

InGaAs/GaAs multiple quantum well (MQW)-depleted optical thyristor lasers operating at 1.06 μm with a waveguide-type PiNiN structure is presented for the first time. The optical thyristor lasers clearly show nonlinear S-shaped current–voltage and lasing characteristics. The measured switching voltage and current are 5 V and 1 mA, respectively. The holding voltage and current are 2.6 V and 3.6 mA, respectively. A relatively high output light power of 30 mW per facet at room temperature is achieved. The lasing wavelength is 1.055 μm at a bias current of 80 mA at 25°C.

© 2013 Optical Society of America

OCIS Codes
(040.4200) Detectors : Multiple quantum well
(140.0140) Lasers and laser optics : Lasers and laser optics
(230.2090) Optical devices : Electro-optical devices

ToC Category:
Detectors

History
Original Manuscript: September 12, 2013
Revised Manuscript: October 21, 2013
Manuscript Accepted: October 22, 2013
Published: November 14, 2013

Citation
Huolei Wang, Junping Mi, Xuliang Zhou, Laura Meriggi, Matthew Steer, Bifeng Cui, Weixi Chen, Jiaoqing Pan, and Ying Ding, "1.06-μm InGaAs/GaAs multiple-quantum-well optical thyristor lasers with a PiNiN structure," Opt. Lett. 38, 4868-4871 (2013)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-38-22-4868


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