InGaAs/GaAs multiple quantum well (MQW)-depleted optical thyristor lasers operating at 1.06 μm with a waveguide-type PiNiN structure is presented for the first time. The optical thyristor lasers clearly show nonlinear S-shaped current–voltage and lasing characteristics. The measured switching voltage and current are 5 V and 1 mA, respectively. The holding voltage and current are 2.6 V and 3.6 mA, respectively. A relatively high output light power of 30 mW per facet at room temperature is achieved. The lasing wavelength is 1.055 μm at a bias current of 80 mA at 25°C.
© 2013 Optical Society of America
Original Manuscript: September 12, 2013
Revised Manuscript: October 21, 2013
Manuscript Accepted: October 22, 2013
Published: November 14, 2013
Huolei Wang, Junping Mi, Xuliang Zhou, Laura Meriggi, Matthew Steer, Bifeng Cui, Weixi Chen, Jiaoqing Pan, and Ying Ding, "1.06-μm InGaAs/GaAs multiple-quantum-well optical thyristor lasers with a PiNiN structure," Opt. Lett. 38, 4868-4871 (2013)