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Optics Letters

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  • Editor: Alan E. Willner
  • Vol. 38, Iss. 23 — Dec. 1, 2013
  • pp: 4966–4969

Raman lasing in As2S3 high-Q whispering gallery mode resonators

Francis Vanier, Martin Rochette, Nicolas Godbout, and Yves-Alain Peter  »View Author Affiliations


Optics Letters, Vol. 38, Issue 23, pp. 4966-4969 (2013)
http://dx.doi.org/10.1364/OL.38.004966


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Abstract

We report the first observation of a nonlinear process in a chalcogenide microresonator. Raman scattering and stimulated Raman scattering leading to laser oscillation is observed in microspheres made of As2S3. The coupled pump power threshold is as low as 13 μW using a pump wavelength of 1550 nm. The quality factor of the chalcogenide microresonator is also the highest ever reported with Q>7×107.

© 2013 Optical Society of America

OCIS Codes
(140.3550) Lasers and laser optics : Lasers, Raman
(160.4330) Materials : Nonlinear optical materials
(190.5650) Nonlinear optics : Raman effect
(140.3945) Lasers and laser optics : Microcavities

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: September 3, 2013
Manuscript Accepted: October 17, 2013
Published: November 20, 2013

Citation
Francis Vanier, Martin Rochette, Nicolas Godbout, and Yves-Alain Peter, "Raman lasing in As2S3 high-Q whispering gallery mode resonators," Opt. Lett. 38, 4966-4969 (2013)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-38-23-4966


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