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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 38, Iss. 23 — Dec. 1, 2013
  • pp: 5200–5203

Sub-bandgap linear-absorption-based photodetectors in avalanche mode in PN-diode-integrated silicon microring resonators

Yu Li, Shaoqi Feng, Yu Zhang, and Andrew W. Poon  »View Author Affiliations

Optics Letters, Vol. 38, Issue 23, pp. 5200-5203 (2013)

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We report a sub-bandgap linear-absorption-based photodetector in avalanche mode at 1550 nm in a PN-diode-integrated silicon microring resonator. The photocurrent is primarily generated by the defect-state absorption introduced by the boron and phosphorous ion implantation during the PN diode formation. The responsivity is enhanced by both the cavity effect and the avalanche multiplication. We measure a responsivity of 72.8mA/W upon 8 V at cavity resonances in avalanche mode, corresponding to a gain of 72 relative to the responsivity of 1.0mA/W upon 3 V at cavity resonances in normal mode. Our device exhibits a 3 dB bandwidth of 7GHz and an open eye diagram at 15Gbit/s upon 8 V.

© 2013 Optical Society of America

OCIS Codes
(040.5160) Detectors : Photodetectors
(230.0230) Optical devices : Optical devices
(230.5750) Optical devices : Resonators
(040.1345) Detectors : Avalanche photodiodes (APDs)

ToC Category:
Optical Devices

Original Manuscript: September 3, 2013
Revised Manuscript: October 22, 2013
Manuscript Accepted: November 2, 2013
Published: November 27, 2013

Yu Li, Shaoqi Feng, Yu Zhang, and Andrew W. Poon, "Sub-bandgap linear-absorption-based photodetectors in avalanche mode in PN-diode-integrated silicon microring resonators," Opt. Lett. 38, 5200-5203 (2013)

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