Heterogeneously integrated III-V-on-silicon second-order distributed feedback lasers utilizing an ultra-thin DVS-BCB die-to-wafer bonding process are reported. A novel DFB laser design exploiting high confinement in the active waveguide is demonstrated. A 14 mW single-facet output power coupled to a silicon waveguide, 50 dB side-mode suppression ratio and continuous wave operation up to 60°C around 1550 nm is obtained.
© 2013 Optical Society of America
Lasers and Laser Optics
Original Manuscript: July 17, 2013
Revised Manuscript: October 10, 2013
Manuscript Accepted: October 21, 2013
Published: December 12, 2013
S. Keyvaninia, S. Verstuyft, L. Van Landschoot, F. Lelarge, G.-H. Duan, S. Messaoudene, J. M. Fedeli, T. De Vries, B. Smalbrugge, E. J. Geluk, J. Bolk, M. Smit, G. Morthier, D. Van Thourhout, and G. Roelkens, "Heterogeneously integrated III-V/silicon distributed feedback lasers," Opt. Lett. 38, 5434-5437 (2013)