In this Letter we demonstrate heralded single-photon generation in a III–V semiconductor photonic crystal platform through spontaneous four-wave mixing. We achieve a high brightness of $3.4\times {10}^7\text{pairs}·{\mathrm{s}}^{-1}{\mathrm{nm}}^{-1}{\mathrm{W}}^{-1}$ facilitated through dispersion engineering and the suppression of two-photon absorption in the gallium indium phosphide material. Photon pairs are generated with a coincidence-to-accidental ratio over 60 and a low $g^{(2)}(0)$ of 0.06 proving nonclassical operation in the single photon regime.

© 2013 Optical Society of America

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