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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 38, Iss. 6 — Mar. 15, 2013
  • pp: 830–832

Injection locking of violet laser diodes with a 3.2 GHz offset frequency for driving Raman transitions in 43Ca+

B. C. Keitch, N. R. Thomas, and D. M. Lucas  »View Author Affiliations

Optics Letters, Vol. 38, Issue 6, pp. 830-832 (2013)

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Two cw single-mode violet (397 nm) diode lasers are locked to a single external-cavity master diode laser by optical injection locking. A double-pass 1.6 GHz acousto-optic modulator is used to provide a 3.2 GHz offset frequency between the two slave lasers. We achieve up to 20 mW usable output in each slave beam, with as little as 25 μW of injection power at room temperature. An optical heterodyne measurement of the beat note between the two slave beams gives a linewidth of 10Hz at 3.2 GHz. We also estimate the free-running linewidth of the master laser to be approximately 3 MHz by optical heterodyning with a similar device.

© 2013 Optical Society of America

OCIS Codes
(140.0140) Lasers and laser optics : Lasers and laser optics
(270.5585) Quantum optics : Quantum information and processing

ToC Category:
Lasers and Laser Optics

Original Manuscript: December 10, 2012
Revised Manuscript: February 7, 2013
Manuscript Accepted: February 7, 2013
Published: March 6, 2013

B. C. Keitch, N. R. Thomas, and D. M. Lucas, "Injection locking of violet laser diodes with a 3.2 GHz offset frequency for driving Raman transitions in 43Ca+," Opt. Lett. 38, 830-832 (2013)

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