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Injection locking of violet laser diodes with a 3.2 GHz offset frequency for driving Raman transitions in 43Ca+ |
Optics Letters, Vol. 38, Issue 6, pp. 830-832 (2013)
http://dx.doi.org/10.1364/OL.38.000830
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Abstract
Two cw single-mode violet (397 nm) diode lasers are locked to a single external-cavity master diode laser by optical injection locking. A double-pass 1.6 GHz acousto-optic modulator is used to provide a 3.2 GHz offset frequency between the two slave lasers. We achieve up to 20 mW usable output in each slave beam, with as little as 25 μW of injection power at room temperature. An optical heterodyne measurement of the beat note between the two slave beams gives a linewidth of
© 2013 Optical Society of America
OCIS Codes
(140.0140) Lasers and laser optics : Lasers and laser optics
(270.5585) Quantum optics : Quantum information and processing
ToC Category:
Lasers and Laser Optics
History
Original Manuscript: December 10, 2012
Revised Manuscript: February 7, 2013
Manuscript Accepted: February 7, 2013
Published: March 6, 2013
Citation
B. C. Keitch, N. R. Thomas, and D. M. Lucas, "Injection locking of violet laser diodes with a 3.2 GHz offset frequency for driving Raman transitions in 43Ca+," Opt. Lett. 38, 830-832 (2013)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-38-6-830
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