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Hybrid III–V/silicon single-mode laser with periodic microstructures |
Optics Letters, Vol. 38, Issue 6, pp. 842-844 (2013)
http://dx.doi.org/10.1364/OL.38.000842
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Abstract
In this Letter, a III–V/silicon hybrid single-mode laser operating at C band for photonic integration circuit is presented. The InGaAlAs gain structure is bonded onto a patterned silicon-on insulator through wafer to wafer directly. The mode selected mechanism based on a hybrid III–V/silicon straight cavity with periodic microstructures is applied, which only need low cost i-line projection photolithography in the whole technological process. At room temperature, we obtain 0.62 mW output power in continuous-wave. The side mode suppression ratio of larger than 20 dB is obtained from experiments. Over 10,000 h lifetime can be reached.
© 2013 Optical Society of America
OCIS Codes
(140.5960) Lasers and laser optics : Semiconductor lasers
(250.5300) Optoelectronics : Photonic integrated circuits
ToC Category:
Integrated Optics
History
Original Manuscript: January 14, 2013
Revised Manuscript: January 29, 2013
Manuscript Accepted: January 29, 2013
Published: March 11, 2013
Citation
Yejin Zhang, Hongwei Qu, Hailing Wang, Siriguleng Zhang, Shaodong Ma, Aiyi Qi, Zhigang Feng, Hongling Peng, and Wanhua Zheng, "Hybrid III–V/silicon single-mode laser with periodic microstructures," Opt. Lett. 38, 842-844 (2013)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-38-6-842
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