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Optics Letters

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  • Editor: Alan E. Willner
  • Vol. 38, Iss. 6 — Mar. 15, 2013
  • pp: 842–844

Hybrid III–V/silicon single-mode laser with periodic microstructures

Yejin Zhang, Hongwei Qu, Hailing Wang, Siriguleng Zhang, Shaodong Ma, Aiyi Qi, Zhigang Feng, Hongling Peng, and Wanhua Zheng  »View Author Affiliations


Optics Letters, Vol. 38, Issue 6, pp. 842-844 (2013)
http://dx.doi.org/10.1364/OL.38.000842


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Abstract

In this Letter, a III–V/silicon hybrid single-mode laser operating at C band for photonic integration circuit is presented. The InGaAlAs gain structure is bonded onto a patterned silicon-on insulator through wafer to wafer directly. The mode selected mechanism based on a hybrid III–V/silicon straight cavity with periodic microstructures is applied, which only need low cost i-line projection photolithography in the whole technological process. At room temperature, we obtain 0.62 mW output power in continuous-wave. The side mode suppression ratio of larger than 20 dB is obtained from experiments. Over 10,000 h lifetime can be reached.

© 2013 Optical Society of America

OCIS Codes
(140.5960) Lasers and laser optics : Semiconductor lasers
(250.5300) Optoelectronics : Photonic integrated circuits

ToC Category:
Integrated Optics

History
Original Manuscript: January 14, 2013
Revised Manuscript: January 29, 2013
Manuscript Accepted: January 29, 2013
Published: March 11, 2013

Citation
Yejin Zhang, Hongwei Qu, Hailing Wang, Siriguleng Zhang, Shaodong Ma, Aiyi Qi, Zhigang Feng, Hongling Peng, and Wanhua Zheng, "Hybrid III–V/silicon single-mode laser with periodic microstructures," Opt. Lett. 38, 842-844 (2013)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-38-6-842


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References

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