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Optics Letters

Optics Letters

| RAPID, SHORT PUBLICATIONS ON THE LATEST IN OPTICAL DISCOVERIES

  • Editor: Alan E. Willner
  • Vol. 38, Iss. 6 — Mar. 15, 2013
  • pp: 941–943

Low-temperature deposition of high-quality silicon oxynitride films for CMOS-integrated optics

B. Rangarajan, A. Y. Kovalgin, K. Wörhoff, and J. Schmitz  »View Author Affiliations


Optics Letters, Vol. 38, Issue 6, pp. 941-943 (2013)
http://dx.doi.org/10.1364/OL.38.000941


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Abstract

The growth of silicon oxynitride thin films applying remote inductively coupled, plasma-enhanced chemical vapor deposition is optimized toward high optical quality at a deposition temperature as low as 150°C. Propagation losses of 0.5±0.05dB/cm, 1.6±0.2dB/cm, and 0.6±0.06dB/cm are measured on as-deposited waveguides for wavelengths of 1300, 1550, and 1600 nm, respectively. Films were deposited onto a 0.25 μm technology mixed-signal CMOS chip to show the application perspective for three-dimensional integrated optoelectronic chips.

© 2013 Optical Society of America

OCIS Codes
(160.3130) Materials : Integrated optics materials
(250.0250) Optoelectronics : Optoelectronics

ToC Category:
Optoelectronics

History
Original Manuscript: January 18, 2013
Revised Manuscript: February 8, 2013
Manuscript Accepted: February 8, 2013
Published: March 13, 2013

Citation
B. Rangarajan, A. Y. Kovalgin, K. Wörhoff, and J. Schmitz, "Low-temperature deposition of high-quality silicon oxynitride films for CMOS-integrated optics," Opt. Lett. 38, 941-943 (2013)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-38-6-941


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