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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 38, Iss. 8 — Apr. 15, 2013
  • pp: 1206–1208

Diode-pumped actively Q-switched Tm, Ho:GdVO4/BaWO4 intracavity Raman laser at 2533 nm

Jiaqun Zhao, Xinlu Zhang, Xu Guo, Xiujuan Bao, Li Li, and Jinhui Cui  »View Author Affiliations

Optics Letters, Vol. 38, Issue 8, pp. 1206-1208 (2013)

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A compact diode-end-pumped actively Q -switched intracavity Raman laser with Tm, Ho : GdVO 4 laser gain medium and BaWO 4 Raman gain crystal is demonstrated for the first time. The Raman threshold is as low as 2.0 W of diode power at 802 nm. The highest average output power of 186 mW at the first Stokes wavelength of 2533 nm is obtained at a pulse repetition rate of 1 kHz, and a pump power of 2.8 W, corresponding to a diode-to-Stokes optical conversion efficiency of 6.6%. The pulsewidth and pulse energy are 7.8 ns and 0.19 mJ, respectively.

© 2013 Optical Society of America

OCIS Codes
(140.3480) Lasers and laser optics : Lasers, diode-pumped
(140.3550) Lasers and laser optics : Lasers, Raman
(140.3580) Lasers and laser optics : Lasers, solid-state
(140.3538) Lasers and laser optics : Lasers, pulsed

ToC Category:
Lasers and Laser Optics

Original Manuscript: January 29, 2013
Revised Manuscript: March 5, 2013
Manuscript Accepted: March 7, 2013
Published: April 1, 2013

Jiaqun Zhao, Xinlu Zhang, Xu Guo, Xiujuan Bao, Li Li, and Jinhui Cui, "Diode-pumped actively Q-switched Tm, Ho:GdVO4/BaWO4intracavity Raman laser at 2533 nm," Opt. Lett. 38, 1206-1208 (2013)

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