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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 38, Iss. 9 — May. 1, 2013
  • pp: 1573–1575

Improved AlGaInP vertical emitting light-emitting diodes using direct printing

Joong-Yeon Cho, Kyeong-Jae Byeon, Jin-Seung Kim, and Heon Lee  »View Author Affiliations

Optics Letters, Vol. 38, Issue 9, pp. 1573-1575 (2013)

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In this study, we fabricated a high-brightness AlGaInP light-emitting diode (LED) using the direct printing technique and dry etching. In general, wet etching is used for surface roughening to improve the light extraction of AlGaInP red LEDs. However, a structure fabricated by wet etching has limited height and shows a tiled cone shape after the etching process due to the AlGaInP crystal structure. These limitations reduce the light extraction of the LED. As a result, we fabricated a perfectly cone-shaped pattern with high aspect ratio using direct printing by etching to maximize the LED light extraction efficiency. Compared to the red LED with a wet-etched structure, the patterning enhanced the light output power by 12% without electrical degradation. This enhanced light output power was maintained even after the packaging process.

© 2013 Optical Society of America

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(310.1210) Thin films : Antireflection coatings
(310.1860) Thin films : Deposition and fabrication
(310.6860) Thin films : Thin films, optical properties

ToC Category:
Optical Devices

Original Manuscript: March 27, 2013
Manuscript Accepted: April 3, 2013
Published: April 30, 2013

Joong-Yeon Cho, Kyeong-Jae Byeon, Jin-Seung Kim, and Heon Lee, "Improved AlGaInP vertical emitting light-emitting diodes using direct printing," Opt. Lett. 38, 1573-1575 (2013)

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