We investigated GaN-based vertical light-emitting diodes (VLEDs) with periodic and conical nanopillar arrays (CNAs) to improve the light-output efficiency. We found that a 470 nm diameter and 0.8–0.9 μm height increased the light output, and the devices suffered no significant electrical property degradations. The light-output power was 272% and 5.1% greater than flat- and rough-surface VLEDs at 350 mA, respectively. These improved optical properties are attributed to the optimized CNAs, which increase the effective photon escape cone and reduce the total internal reflection at the n-GaN–air interface. We also investigated the emission characteristics and mechanisms with finite-difference time-domain simulations.
© 2014 Optical Society of America
Original Manuscript: March 17, 2014
Revised Manuscript: April 7, 2014
Manuscript Accepted: May 2, 2014
Published: June 5, 2014
Su Jin Kim, Kyeong Heon Kim, Ho Young Chung, Hee Woong Shin, Byeong Ryong Lee, Tak Jeong, Hyung Jo Park, and Tae Geun Kim, "Light-output enhancement of GaN-based vertical light-emitting diodes using periodic and conical nanopillar structures," Opt. Lett. 39, 3464-3467 (2014)