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Optics Letters

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  • Editor: Xi-Cheng Zhang
  • Vol. 39, Iss. 14 — Jul. 15, 2014
  • pp: 4204–4207

Germanium p-i-n avalanche photodetector fabricated by point defect healing process

Jaewoo Shim, Dong-Ho Kang, Gwangwe Yoo, Seong-Taek Hong, Woo-Shik Jung, Bong Jin Kuh, Beomsuk Lee, Dongjae Shin, Kyoungho Ha, Gwang Sik Kim, Hyun-Yong Yu, Jungwoo Baek, and Jin-Hong Park  »View Author Affiliations


Optics Letters, Vol. 39, Issue 14, pp. 4204-4207 (2014)
http://dx.doi.org/10.1364/OL.39.004204


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Abstract

In this Letter, we report Ge p-i-n avalanche photodetectors (APD) with low dark current (sub 1 μA below VR=5V), low operating voltage (avalanche breakdown voltage=813V), and high multiplication gain (440–680) by exploiting a point defect healing method (between 600°C and 650°C) and optimizing the doping concentration of the intrinsic region (p-type 1017cm3). In addition, Raman spectroscopy and electrochemical capacitance voltage analyses were performed to investigate the junction interfaces in more detail. This successful demonstration of Ge p-i-n APD with low dark current, low operating voltage, and high gain is promising for low-power and high-sensitivity Ge PD applications.

© 2014 Optical Society of America

OCIS Codes
(040.3060) Detectors : Infrared
(040.1345) Detectors : Avalanche photodiodes (APDs)

ToC Category:
Detectors

History
Original Manuscript: April 24, 2014
Manuscript Accepted: May 27, 2014
Published: July 10, 2014

Citation
Jaewoo Shim, Dong-Ho Kang, Gwangwe Yoo, Seong-Taek Hong, Woo-Shik Jung, Bong Jin Kuh, Beomsuk Lee, Dongjae Shin, Kyoungho Ha, Gwang Sik Kim, Hyun-Yong Yu, Jungwoo Baek, and Jin-Hong Park, "Germanium p-i-n avalanche photodetector fabricated by point defect healing process," Opt. Lett. 39, 4204-4207 (2014)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-39-14-4204


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